SSM6N7002BFE 2009-11-27 1 toshiba field-effect transistor silicon n channel mos type (u-mos ) SSM6N7002BFE high-speed switching applications analog switch applications ? small package ? low on-resistance : r ds(on) = 3.3 (max) (@v gs = 4.5 v) : r ds(on) = 2.6 (max) (@v gs = 5 v) : r ds(on) = 2.1 (max) (@v gs = 10 v) absolute maximum ratings (ta = 25c) (q1, q2 common) characteristics symbol rating unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v dc i d 200 drain current pulse i dp 800 ma power dissipation p d (note 1) 150 mw channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage a nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1:total rating, mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 0.135mm 2 6) marking equivalent circuit (top view) unit: mm 0.120.05 0.550.05 0.20.05 6 1.20.05 1.60.05 1.00.05 1 2 0.50.5 3 1.60.05 5 4 jedec D jeita D toshiba 2-2n1d weight: 3.0 mg (typ.) es6 1.source1 2.gate1 3.drain2 4.source2 5.gate2 6.drain1 nm 6 5 4 1 2 3 654 123 q1 q2
SSM6N7002BFE 2009-11-27 2 electrical characteristics (ta = 25c)(q1, q2 common) characteristics symbol test condition min typ max unit gate leakage current i gss v gs = 20 v, v ds = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 60 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = -10 v 45 ? ? v drain cutoff current i dss v ds = 60 v, v gs = 0 v ? ? 1 a gate threshold voltage v th v ds = 10 v, i d = 0.25 ma 1.5 ? 3.1 v forward transfer admittance ? y fs ? v ds = 10 v, i d = 200 ma (note 2) 225 ? ? ms i d = 500 ma, v gs = 10 v (note 2) ? 1.62 2.1 i d = 100 ma, v gs = 5 v (note 2) ? 1.90 2.6 drain-source on-resistance r ds (on) i d = 100 ma, v gs = 4.5 v (note 2) ? 2.10 3.3 input capacitance c iss ? 17.0 ? reverse transfer capacitance c rss ? 1.9 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 3.6 ? pf turn-on delay time td (on) ? 3.3 6.6 switching time turn-off delay time td (off) v dd = 30 v , i d = 200 ma , v gs = 0 to 10 v ? 14.5 40 ns drain-source forward voltage v dsf i d = -200 ma, v gs = 0 v (note 2) ? -0.84 -1.2 v note2: pulse test switching time test circuit precaution let v th be the voltage applied between gate and sour ce that causes the drain current (i d ) to be low (0.25 ma for the SSM6N7002BFE). then, for norma l switching operation, v gs(on) must be higher than v th, and v gs(off) must be lower than v th. this relationship can be expressed as: v gs(off) < v th < v gs(on). take this into consideration when using the device handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing , and containers and other objects that come into direct contact with devices should be made of antistatic materials. thermal resistance r th (ch-a) and power dissipation p d vary depending on board material, board area, board thickness and pad area. when using this device, please ta ke heat dissipation into consideration. (c) v out (b) v in (a) test circuit td (on) 90 % 10 % 0 v 10 v 90 % 10 % td (off) t r t f v dd v ds ( on ) v dd = 30 v duty 1% v in : t r , t f < 2 ns (z out = 50 ) common source ta = 25 c 10 v 0 10 s v dd out in 50 r l
SSM6N7002BFE 2009-11-27 3 (q1, q2 common) 300 r ds (on) ? i d drain current i d (ma) drain?source on-resistance r ds (on) ( ? ) 10 30 0 100 1000 5 1 vgs = 10 v 5.0 v 4.5 v 4 3 2 common source ta = 25c ambient temperature ta (c) r ds (on) ? ta drain?source on-resistance r ds (on) ( ? ) 0 ? 50 0 50 150 100 5 2 common source i d = 500 ma / v gs = 10 v 100 ma / 4.5 v 100 ma / 5.0v 4 3 1 ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) 3.0 0 ? 50 0 150 2.0 50 100 1.0 common source v ds = 10 v i d = 0.25 ma gate?source voltage v gs (v) i d ? v gs drain current i d (ma) 1000 0 10 100 0.1 1 0.01 5.0 4.0 - ? 25 c 2.0 3.0 1.0 common source v ds = 10 v 25 c ta = 100 c drain?source voltage v ds (v) i d ? v ds drain current i d (ma) 0 400 0 0.4 0.8 1.2 2.0 200 1.6 600 800 10 v common source ta = 25 c 7.0 v 3.5 v vgs = 3.3 v 4.5 v 1000 5.0 v 4.0 v drain?source on-resistance r ds (on) ( ? ) 0 10 gate?source voltage v gs (v) 0 r ds (on) ? v gs 20 2 25 c 5 ta = 100 c -25 c i d = 100 ma common source ta = 25c 4 3 1
SSM6N7002BFE 2009-11-27 4 (q1, q2 common) drain current i d (ma) forward transfer admittance ? y fs ? (s) |y fs | ? i d 0.001 1000 0.01 0.1 10 100 0.03 0.003 1 1 0.3 common source v ds = 10 v ta = 25c drain current i d (ma) switching time t (ns) t ? i d 1 1 100 1000 100 1000 t d(off) common source v dd = 30 v v gs = 0 to 10 v ta = 25 c 10 10 t f t r t d(on) drain reverse current i dr (ma) drain?source voltage v ds (v) i dr ? v ds 1000 0 600 800 0 200 -0.2 -0.6 -0.4 -1.0 -0.8 -1.2 400 common source v gs = 0 v ta = 25c g d s i dr drain?source voltage v ds (v) c ? v ds capacitance c (pf) 1 0.1 1 10 100 100 30 50 10 5 3 c iss c rss c oss common source ta = 25c f = 1 mhz v gs = 0 v p d * ? ta 0 0 100 250 160 40 50 150 200 80 120 ambient temperature ta (c) drain power dissipation p d * (mw) mounted on fr4 board. (25.4 mm 25.4 mm 1.6 mm, cu pad: 0.135 mm 2 6) *:total rating
SSM6N7002BFE 2009-11-27 5 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the ?toshiba semiconductor reliability handbook? and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? 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